Abstract

In this work, profiles of laser-induced diffusion of arsenic in silicon arepresented. These profiles are considered to attempt increasing of the currentgain of silicon transistors. The current gain is well enhanced. Thisenhancement is attributed to the increase achieved in the diffusion lengthwithin a certain layer of emitter region. Laser-induced diffusion is a perfecttechnique for improving the characteristics of electronic devices since it isflexible, contactless, clean and well controlled.

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The article was added to IASJ on 2012-05-04

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